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this is information on a product in full production. july 2014 docid019059 rev 2 1/13 STP110N55F6 n-channel 55 v, 4.5 ? typ., 110 a stripfet? f6 power mosfet in a to-220 package datasheet - production data figure 1. internal schematic diagram features ? low gate charge ? very low on-resistance ? high avalanche ruggedness applications ? switching applications description this device is an n-channel power mosfet developed using the stripfet? f6 technology, with a new trench gate structure. the resulting power mosfet exhibits a very low r ds(on) in all packages. to-220 1 2 3 tab $0y '7$% * 6 order code v ds r ds(on) max. i d STP110N55F6 55 v 5.2 m ? 110 a table 1. device summary order code marking packages packaging STP110N55F6 110n55f6 to-220 tube www.st.com
contents STP110N55F6 2/13 docid019059 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid019059 rev 2 3/13 STP110N55F6 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 110 a i d drain current (continuous) at t c = 100 c 85 a i dm (1) 1. current limited by package. drain current (pulsed) 440 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STP110N55F6 4/13 docid019059 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 55 v i dss zero gate voltage drain current v gs = 0, v ds = 55 v 1 a v gs = 0, v ds = 55 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 60 a 4.5 5.2 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 25 v, f = 1 mhz - 7390 - pf c oss output capacitance - 504 - pf c rss reverse transfer capacitance -355-pf q g total gate charge v dd = 44 v, i d = 110 a, v gs = 10 v (see figure 14) -126-nc q gs gate-source charge - 32 - nc q gd gate-drain charge - 38 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 27.5 v, i d = 55 a r g =4.7 ? v gs = 10 v (see figure 13) -23-ns t r rise time - 65 - ns t d(off) turn-off-delay time - 503 - ns t f fall time - 237 - ns
docid019059 rev 2 5/13 STP110N55F6 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 110 a i sdm (1) 1. current limited by package. source-drain current (pulsed) - 440 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 110 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 110 a, v dd = 44 v di/dt = 100 a/s, t j = 150 c (see figure 15) -44 ns q rr reverse recovery charge - 82 nc i rrm reverse recovery current - 3.8 a
electrical characteristics STP110N55F6 6/13 docid019059 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjohsxovh *,3*6$ / 6lqjohsxovh . w s v *,3*6$ , ' 9 '6 9 $ 9 9 9 9 *6 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$ v gs 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =44v i d =110a 12 am15580v1 5 '6rq , ' $ p 9 *6 9 *,3*6$
docid019059 rev 2 7/13 STP110N55F6 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized v (br)dss vs temperature & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ v gs(th) 0.6 0.4 0.2 0 -75 -25 t j (c) (norm) -50 0.8 50 0 25 75 i d =250a 100 125 1 1.2 am15583v1 5 '6rq 7 - ?& qrup 9 *6 9 *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$ v (br)dss -75 -25 t j (c) (norm) -50 50 0 25 75 0.9 0.95 1 1.05 1.1 1.15 i d = 1ma 100 125 am15585v1
test circuits STP110N55F6 8/13 docid019059 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid019059 rev 2 9/13 STP110N55F6 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
package mechanical data STP110N55F6 10/13 docid019059 rev 2 figure 19. to-220 type a drawing bw\sh$b5hyb7
docid019059 rev 2 11/13 STP110N55F6 package mechanical data 13 table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q2.65 2.95
revision history STP110N55F6 12/13 docid019059 rev 2 5 revision history table 9. document revision history date revision changes 18-jul-2011 1 first release. 11-jul-2014 2 ? modified: title and description ? modified: i d (at t c = 100 c) value in table 2 ? modified: r ds(on) typical value ? modified: the entire typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: section 4: package mechanical data ? minor text changes
docid019059 rev 2 13/13 STP110N55F6 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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